DataSheet: PDF icon Serial EEPROM 24Cpdf. AT24C02 is an electrically erasable and programmable ROM. It has a 2Kbits of memory size arranged in 32 . trically erasable and programmable read-only memory (EEPROM) organized as . Part of the Array Protected. 24C01A. 24C 24C 24C 24C At VCC. 24c02 EEPROM are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for 24c02 EEPROM.
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United States Patent and Trademark Office. The data is transferred and received serially through serial data SDA pin.
Skip to main content. The Japan Society of Applied Physics: Many microcontrollers include both: Choosing Motor For Robots.
Electronic Inventions and Discoveries: There are three address pins in AT24C02 for selecting a particular chip. Archived from the original on 3 May One of their research includes MONOS metal – oxide – nitride -oxide- semiconductor technology,  which is used Renesas Electronics ‘ flash memory integrated in single-chip microcontrollers until today.
Magnetic tape Hard disk drive. The data is read or written between the start and stop conditions on every transition of SCL from high to low.
24C02 | EEPROM AT24C02 | Datasheet – Pin Diagram & Description
Thus here it is: But FLOTOX’ s theoretical basis is Fowler—Nordheim tunneling hot-carrier injection through a thin silicon dioxide layer between the floating-gate and the substrate. And indeed, you are quit right, of course. It was also used on video game cartridges to save game progress and configurations, before the usage of external and internal flash memories. However, I just wanted to give my impression that there seems to be little way to know for sure that the data being read was 244c02 correct.
Serial EEPROM AT24C02
In Maysome important research result was disclosed by Fairchild and Siemens. The theoretical basis of these devices is Avalanche hot-carrier injection.
Do not send technical questions via personal eepfom – they will be ignored. In the above setup, I knew it of course, as I myself wrote it. The electric field of the trapped electrons adds to the electrons in the floating gate, lowering the window between threshold voltages for zeros vs ones.
The device can be addressed serially by the software. The manufacturers usually specify the maximum number of rewrites being 1 dafasheet or more. Vcc enables write protection. EEPROM still requires 2 transistors structure per bit to erase a dedicated byte in the memory, while flash memory has 1 transistor per bit to erase a region of the memory.
Inone of electrically re-programmable non-volatile memory was invented by Fujio Masuoka at Toshiba, who is also known as the inventor of flash memory.
EEPROM also E 2 PROM stands for Electrically Erasable Programmable Read-Only Memory and is a type of non-volatile memory used in computers, integrated in microcontrollers for smart cards and remote keyless systemand other electronic devices to store relatively small amounts of data but allowing individual bytes to be erased and reprogrammed. Apparently, there should perhaps be some time between available and receive Supply voltage; 5V up to 5.
This page was last edited on 20 Octoberat Archived copy as title Wikipedia articles with GND identifiers. When data is to be read or write, first a start condition is created followed by device address, byte address and the data itself.
In early s, some studies, inventionsand development for electrically re-programmable non-volatile memories were performed by various companies and organizations. Reading the datasheet gave me the wrong impression that I could get away with being impatient.