Fundamentals of Modern VLSI Devices [Yuan Taur, Tak H. Ning] on . *FREE* shipping on qualifying offers. This book examines in detail the basic. Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. James Kao, Siva Narendra, Anantha Chandrakasan, Subthreshold leakage modeling and reduction techniques, Proceedings of the IEEE/ACM.
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Amazon Drive Cloud storage from Amazon. Benjamin Gojman added it May 21, Bahram Ganjipour marked it as to-read Apr 04, ComiXology Thousands of Digital Comics. The authors begin with a thorough review of the relevant aspects of semiconductor physics, and proceed to a description Each chapter concludes with real-life exercises that actually extend the depth of analysis, getting the reader directly involved.
Fundamentals of Modern VLSI Devices: Yuan Taur: : Books
It will also be a valuable reference volume for practicing engineers involved in research and development in the electronics industry. Good textbook for grad students learning device fundamentals. Adrien Maciel marked it as to-read Jun 15, Navaneet marked it as to-read Dec 30, For the starter I will suggest to pick up Tsividis book on “Operation and modeling of MOS Transistor” and concurrently try the present volume.
From the content and organization of this book I rate it 4.
Fundamentals of Modern VLSI Devices – Yuan Taur, Tak H. Ning – Google Books
The treatment of the subject matter is outstandingly thorough, covering the basic device physics and technology integration of bipolar and field-effect metal-oxide-semiconductor MOSFET and highlighting the subtle tradeoffs involved in modern transistor design and optimization.
The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. Yua your thoughts with other customers. Showing of 16 reviews. Sandeep Sharma marked it as to-read Jul 04, The optimization of these devices for VLSI applications is also covered. Sneha Revankar marked it as to-read Nov 08, They also discuss in detail the scaling, and physical limits to fundamfntals scaling, of CMOS and bipolar devices.
The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between devicex practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. There are no discussion topics on this book yet.
Learn the basic properties and designs mocern modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. Xiuqi added it Oct 26, Amazon Renewed Refurbished products with a warranty.
Why the seller did not state the bad quality of binding of edition hardcover? Try the Kindle edition and experience these great reading features: The first edition has been widely adopted as a standard textbook fundamenhals microelectronics in many major US universities and worldwide.
I am not sure if this is the reason why the price of hardcover is slash down to close to the paperback. Hardcoverpages.
Fundamentals of Modern VLSI Devices
I learn a lot after I finish the first round of read of this book. Pejman Khosropour rated it liked it Feb 06, Mayee marked it as to-read Apr 16, Amazon Second Chance Pass it on, trade it in, give it a second life. CMOS performance factors; 6.